Infineon BAT68-04W Silicon Schottky Barrier Diode: Key Features and Applications

The Infineon BAT68-04W is a high-performance silicon Schottky barrier diode designed for applications requiring low forward voltage drop and fast switching capabilities. As a surface-mount device in a small SOT-323 package, it is well-suited for modern compact electronic designs where efficiency and space savings are critical.

Key Features

One of the most significant attributes of the BAT68-04W is its low forward voltage drop, typically around 0.32 V at 0.1 mA. This characteristic minimizes power loss and improves overall system efficiency, especially in low-voltage or low-current applications. Additionally, the diode offers extremely fast switching performance, making it ideal for high-frequency circuits where rapid transitions are essential. Its low reverse leakage current ensures reliable operation under varying temperature conditions, while the small form factor of the SOT-323 package allows for high-density PCB mounting.

Applications

Thanks to its optimized electrical properties, the BAT68-04W is widely used in RF detection and mixing circuits in communication devices, where its fast response and low capacitance are highly advantageous. It is also commonly employed in signal demodulation, clipping and clamping circuits, and as a protection device in sensitive electronic systems. Furthermore, its efficiency makes it suitable for low-power rectification in portable and battery-operated equipment such as wearables, IoT sensors, and handheld instruments.

ICGOOODFIND

The Infineon BAT68-04W stands out for its combination of low power loss, high-speed performance, and compact design, making it a versatile solution for high-frequency and low-power applications.

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Keywords: Schottky Barrier Diode, Low Forward Voltage, Fast Switching, RF Detection, SOT-323 Package