Infineon BSC047N08NS3GATMA1 OptiMOS™ Power MOSFET: Datasheet and Application Overview

The Infineon BSC047N08NS3GATMA1 represents a pinnacle of efficiency and performance in the realm of power semiconductors. As part of Infineon's esteemed OptiMOS™ family, this N-channel MOSFET is engineered using advanced trench technology, setting a high standard for power management solutions in a wide array of modern electronic applications.

A deep dive into its datasheet reveals a component designed for exceptional low on-state resistance (RDS(on)) and superior switching performance. With a maximum drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 70 A at 25°C, this MOSFET is robust enough to handle significant power levels. Its standout feature is an incredibly low RDS(on) of just 4.7 mΩ (max. at VGS = 10 V), which is a critical parameter directly translating to reduced conduction losses and higher overall system efficiency. This is further complemented by a low gate charge (QG), which minimizes switching losses and allows for higher frequency operation—a key advantage in switch-mode power supplies (SMPS) and DC-DC converters.

The device is housed in a SuperSO8 package, which offers an excellent balance between compact size and superior thermal performance. This package is crucial for power-dense designs where board space is at a premium, such as in computing and telecommunications infrastructure. The BSC047N08NS3GATMA1 is also characterized by its high robustness and reliability, featuring a qualified avalanche ruggedness and an integrated source-drain diode with excellent reverse recovery characteristics.

In application, this MOSFET is a premier choice for synchronous rectification in high-efficiency SMPS, particularly in servers and data centers where energy savings are paramount. Its performance characteristics also make it ideal for use in DC-DC buck converters for point-of-load (POL) regulation, motor drive control circuits in industrial automation, and battery management systems (BMS) where minimizing power loss is essential for thermal management and extending battery life. Designers leverage its fast switching speed and low losses to push the boundaries of power density and efficiency, enabling smaller, cooler, and more reliable end products.

ICGOOODFIND: The Infineon BSC047N08NS3GATMA1 OptiMOS™ MOSFET is a benchmark component for high-efficiency, high-power-density designs. Its industry-leading low RDS(on) and excellent switching performance make it an indispensable solution for advanced power management in computing, telecom, and industrial applications, driving innovation and energy savings.

Keywords: OptiMOS™, Low RDS(on), Synchronous Rectification, SuperSO8 Package, Power Efficiency