Infineon IPC100N04S5-2R8: High-Performance Power MOSFET for Efficient Circuit Design

In the realm of modern electronics, achieving high efficiency and thermal performance in power conversion is paramount. The Infineon IPC100N04S5-2R8 emerges as a standout component, engineered to meet these demanding requirements. This N-channel power MOSFET is designed using Infineon's advanced OptiMOS™ technology, which is renowned for delivering exceptionally low on-state resistance (RDS(on)) and superior switching performance.

The device boasts a maximum drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of up to 100 A, making it an ideal choice for a wide array of demanding applications. These include high-current DC-DC converters in server and telecom power supplies, motor control systems, and high-efficiency synchronous rectification in switched-mode power supplies (SMPS). A key feature of this MOSFET is its ultra-low RDS(on) of just 2.8 mΩ (max. at VGS = 10 V). This minimal resistance is crucial as it directly translates to reduced conduction losses, leading to higher overall system efficiency and less heat generation.

Furthermore, the IPC100N04S5-2R8 is characterized by its low gate charge (Qg). This attribute is essential for achieving high switching speeds, which minimizes switching losses—a critical factor in high-frequency operation. The combination of low RDS(on) and low Qg ensures that the MOSFET operates efficiently even under strenuous conditions, enabling designers to create more compact and power-dense solutions without compromising on thermal management.

The component is offered in a space-saving, thermally enhanced D2PAK-7 (TO-263-7) SMD package. This package is designed for optimal power dissipation, allowing the MOSFET to handle high power levels while maintaining a lower junction temperature. Its surface-mount design also facilitates automated assembly processes, streamlining manufacturing.

In summary, the Infineon IPC100N04S5-2R8 is a high-performance power MOSFET that provides designers with a powerful tool to enhance the efficiency, power density, and thermal performance of their circuits.

ICGOODFIND: The Infineon IPC100N04S5-2R8 is a top-tier OptiMOS™ MOSFET, delivering industry-leading efficiency through its ultra-low 2.8 mΩ RDS(on) and optimized switching characteristics, making it perfect for high-current power conversion applications.

Keywords: Power MOSFET, Low RDS(on), OptiMOS™, High Efficiency, Synchronous Rectification